ISBN: 9781558998759 - Chalcogenide alloys for reconfigurable electronics : symposium held April 19-21, 2006, San Francisco, California, U.S.A.

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Chalcogenide alloys for reconfigurable electronics : symposium held April 19-21, 2006, San Francisco, California, U.S.A.

ISBN: 9781558998759
Format: Hardback
Publisher: Materials Res Soc

£49.92
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ISBN	1558998756		Library of Congress	TA
ISBN13	9781558998759 (What's this?)		Pages	191 p.
Publisher	Materials Res Soc		Volumes	001
Format	Hardback

		OUM nonvolatile semiconductor memory technology overview by Stephen J. Hudgens		3
		Modeling considerations for phase change electronic memory devices by Guy Wicker		13
		Thermal analysis and structural design of phase change random access memory by Rong Zhao and Ler Ming Lim and Luping Shi and Hock Koon Lee and Hongxin Yang and Tow Chong Chong		23
		Investigation on ultra-high density and high speed non-volatile phase change random access memory (PCRAM) by material engineering by E. G. Yeo and L. P. Shi and R. Zhao and T. C. Chong		29
		A computational study of oxygen contamination in Sb[subscript 2]Te[subscript 3] by John E. Boyd and Arthur Edwards and Andrew C. Pineda		35
		Localized light focusing and super resolution readout via chalcogenide thin film by Junji Tominaga and Paul Fons and Takayuki Shima and Kazuma Kurihara and Takashi Nakano and Alexander Kolobov and Stephane Petit		41
		Impact of material crystallization characteristics on the switching behavior of the phase change memory cell by Thomas Gille and Ludovic Goux and Judit Lisoni and Kristin De Meyer and Dirk J. Wouters		53
		Kinetics of optically-induced crystallization and structure of Ag[subscript x](As[subscript 0.48]S[subscript 0.26]Se[subscript 0.26])[subscript 100-x] chalcogenide films by Milos Krbal and Tomas Wagner and Miloslav Frumar and Milan Vlcek and Petr Bezdicka		59
		Ag-Sb-S thin films prepared by RF magnetron sputtering and their properties by Jan Gutwirth and Tomas Wagner and Milan Vlcek and Cestmir Drasar and Ludvik Benes and Martin Hrdlicka and Miloslav Frumar and Jiri Schwarz and Helena Ticha		65
		Dielectric constants and endurance of chalcogenide phase-change non-volatile memory by Semyon D. Savransky and Eugenio F. Prokhorov		75
		Laser synthesis of Sn-Ge-Sb-Te phase change materials by W. D. Song and L. P. Shi and X. S. Miao and T. C. Chong		81
		Characteristics of Si-Sb-Te films for phase change memory by Jie Feng and Yin Zhang and Baowei Qiao and Yanfei Cai and Yinyin Lin and Tingao Tang and Bingchu Cai and Bomy Chen		87
		Phase transformations in bulk (Ge[subscript 2]Se[subscript 7])[subscript 88]Bi[subscript 5]Sb[subscript 7] by Guy J. Adriaenssens		93
		Preparation of Ge[subscript 2]Sb[subscript 2]Te[subscript 5] thin film for phase change random access memory by RF magnetron sputtering and DC magnetron sputtering by Shin Kikuchi and Dong Yong Oh and Isao Kimura and Yutaka Nishioka and Koukou Suu		99
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