Chalcogenide Alloys for Reconfigurable Electronics: Volume 918

Switching, chalcogenide alloys are the core of rewriteable DVDs and of nonvolatile memories under development in several large semiconductor houses (Intel, BAE Systems, Samsung). They could also revolutionize reconfigurable electronics if appropriate alloys can be found to maximize the on/off dynamic range. This book brings together device and circuit engineers with physicists, chemists and materials scientists to identify outstanding, fundamental problems, to present technological trends, and to survey the current fundamental understanding of these materials as they pertain to switching, including tailoring materials properties to applications. The volume is different from previous proceedings on amorphous semiconductors because of its relatively narrow scope in materials and its explicit focus on technological issues - processing, novel devices and reliability.

ISBN 1558998756   DEWEY 621.381 ISBN13 9781558998759 (What's this?)   DEWEY edition DC21 Publisher Materials Research Society   Pages 191 Imprint Materials Research Society   Volumes 001 Format Hardback   Series title MRS Proceedings Publication date 11 Oct 2006   Academic level Tertiary education Library of Congress TA

		OUM nonvolatile semiconductor memory technology overview by Stephen J. Hudgens		3
		Modeling considerations for phase change electronic memory devices by Guy Wicker		13
		Thermal analysis and structural design of phase change random access memory by Rong Zhao and Ler Ming Lim and Luping Shi and Hock Koon Lee and Hongxin Yang and Tow Chong Chong		23
		Investigation on ultra-high density and high speed non-volatile phase change random access memory (PCRAM) by material engineering by E. G. Yeo and L. P. Shi and R. Zhao and T. C. Chong		29
		A computational study of oxygen contamination in Sb[subscript 2]Te[subscript 3] by John E. Boyd and Arthur Edwards and Andrew C. Pineda		35
		Localized light focusing and super resolution readout via chalcogenide thin film by Junji Tominaga and Paul Fons and Takayuki Shima and Kazuma Kurihara and Takashi Nakano and Alexander Kolobov and Stephane Petit		41
		Impact of material crystallization characteristics on the switching behavior of the phase change memory cell by Thomas Gille and Ludovic Goux and Judit Lisoni and Kristin De Meyer and Dirk J. Wouters		53
		Kinetics of optically-induced crystallization and structure of Ag[subscript x](As[subscript 0.48]S[subscript 0.26]Se[subscript 0.26])[subscript 100-x] chalcogenide films by Milos Krbal and Tomas Wagner and Miloslav Frumar and Milan Vlcek and Petr Bezdicka		59
		Ag-Sb-S thin films prepared by RF magnetron sputtering and their properties by Jan Gutwirth and Tomas Wagner and Milan Vlcek and Cestmir Drasar and Ludvik Benes and Martin Hrdlicka and Miloslav Frumar and Jiri Schwarz and Helena Ticha		65
		Dielectric constants and endurance of chalcogenide phase-change non-volatile memory by Semyon D. Savransky and Eugenio F. Prokhorov		75
		Laser synthesis of Sn-Ge-Sb-Te phase change materials by W. D. Song and L. P. Shi and X. S. Miao and T. C. Chong		81
		Characteristics of Si-Sb-Te films for phase change memory by Jie Feng and Yin Zhang and Baowei Qiao and Yanfei Cai and Yinyin Lin and Tingao Tang and Bingchu Cai and Bomy Chen		87
		Phase transformations in bulk (Ge[subscript 2]Se[subscript 7])[subscript 88]Bi[subscript 5]Sb[subscript 7] by Guy J. Adriaenssens		93
		Preparation of Ge[subscript 2]Sb[subscript 2]Te[subscript 5] thin film for phase change random access memory by RF magnetron sputtering and DC magnetron sputtering by Shin Kikuchi and Dong Yong Oh and Isao Kimura and Yutaka Nishioka and Koukou Suu		99
		More...

 Be the first to write a customer review